|By Business Wire||
|December 4, 2012 04:00 AM EST||
Efficient Power Conversion Corporation (www.epc-co.com) announces the publication of a Simplified Chinese edition of its gallium nitride transistor textbook, “GaN Transistors for Efficient Power Conversion.” This textbook provides power system design engineers basic technical and application-focused information on how to design more efficient power conversion systems using gallium nitride-based transistors.
According to Professor Li Yong Dong of Tsing Hua University, “This book reviews materials and development of power devices with a research focus on the new gallium nitride semiconductor materials as well as its characteristics and applications. This book’s analyses are intricate with innovative contents, detailed and authentic analyses, having theoretical appreciation while giving engineers practical examples with extensive experimental data in support of extensive analytical discussions. Being a reader in the electronic industry, this is a highly commendable book with a balance of theories, practicalities and readability.”
This practical guide provides guidance on the use of GaN transistors in widely used power electronics applications, ranging from buck converters to Power over Ethernet. Also included are discussions on fundamental power engineering subjects such as; performance characteristics of GaN transistors, layout considerations for GaN circuits, paralleling GaN transistors and driver IC requirements for GaN transistors. The final chapters address GaN device reliability, their exceptional radiation-resistant characteristics as well as their future in power electronics.
English and Simplified Chinese editions of “GaN Transistors for Efficient Power Conversion” are available for $39.95 and can be purchased from the EPC website (www.epc-co.com), Digi-Key (www.digikey.com) or Amazon (www.amazon.com).
About the Authors
The four authors, Alex Lidow, Michael DeRooij, Johan Strydom and Yanping Ma, are working for EPC, the first company to introduce enhancement mode GaN transistors. Collectively the authors have over ninety years experience working in power transistor design and application. All four authors have doctorates in scientific disciplines and are widely recognized published authors. They are pioneers in the emerging GaN transistor technology with Dr. Lidow concentrating on transistor process design, Drs. DeRooij and Strydom focusing on power transistor applications and Dr. Ma providing expertise on quality assurance and reliability.
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as servers, wireless power transmission, envelope tracking, RF transmission, power-over-ethernet (PoE), solar micro inverters, energy efficient lighting, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.
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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
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